| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing compound for chemical mechanical polishing (CMP), with which a high-reliability metal film embedding pattern can be formed efficiently, by obtaining a high CMP speed, while maintaining a low etching speed. SOLUTION: The polishing compound for CMP contains a polymer obtained by graft-polymerizing NVP to PVA. The polishing compound for CMP preferably contain a polymer, for which the degree of polymerization is 100 to 4,000 and the K factor is 12 to 150 in grafting NVP to PVA of which the degree of saponification is 70 to 100 mol%, and the polymer is obtained by blending NVP in a PVA solution and polymerizing it, while using hydrogen peroxide, organic peroxide, or azo compound as an initiator. COPYRIGHT: (C)2009,JPO&INPIT |
