| 摘要 |
<p>Disclosed is a 4T-2S step & repeat unit cell obtained by combining four image sensor unit cells each having four transistors into a single unit. A 4T-2S step & repeat unit cell includes a first photodiode diffusion area pattern, a second photodiode diffusion area pattern, a third photodiode diffusion area pattern, a fourth photodiode diffusion area pattern, a first image signal conversion circuit diffusion area pattern, and a second image signal conversion circuit diffusion area pattern. The second photodiode diffusion area pattern is formed in a diagonal direction from the first photodiode diffusion area pattern. The third photodiode diffusion area pattern is formed above the first photodiode diffusion area pattern beside the second photodiode diffusion area pattern. The fourth photodiode diffusion area pattern is formed in a diagonal direction from the third photodiode diffusion area pattern above the second photodiode diffusion area pattern. The first image signal conversion circuit diffusion area pattern is formed beside the first photodiode diffusion area pattern below the second photodiode diffusion area pattern. The second image signal conversion circuit diffusion area pattern is formed above the third photodiode diffusion area pattern beside the fourth photodiode diffusion area pattern.</p> |
