摘要 |
<p>Disclosed is a field effect transistor having a semiconductor layer which is composed of a complex oxide containing element In, element Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids at the following atomic ratios (1)-(3). In/(In + Zn) = 0.2-0.8 (1) In/(In + X) = 0.29-0.99 (2) Zn/(X + Zn) = 0.29-0.99 (3)</p> |
申请人 |
IDEMITSU KOSAN CO., LTD.;YANO, KOKI;KAWASHIMA, HIROKAZU;INOUE, KAZUYOSHI;TOMAI, SHIGEKAZU;KASAMI, MASASHI |
发明人 |
YANO, KOKI;KAWASHIMA, HIROKAZU;INOUE, KAZUYOSHI;TOMAI, SHIGEKAZU;KASAMI, MASASHI |