| 摘要 |
<p>A nonvolatile semiconductor memory is provided to perform an erase at high speed by obtaining a sufficiently large electron barrier between a charge block layer and a control electrode. A nonvolatile semiconductor memory includes a semiconductor substrate and a memory cell. A source region(2a) and a drain region(2b) are separately formed on the semiconductor substrate. A tunnel insulating layer(6) is formed on a semiconductor substrate board that is a channel region(3) between a source region and a drain region. A charge accumulating layer is formed on the tunnel insulating layer. The charge block layer is formed on the charge accumulating layer. The control electrode is formed on the charge block layer and includes the Hf oxide film or Zr oxide film. At least one element selected from a first group made of V, Cr, Mn, and Tc and at least one element selected from a second group made of F, H, and Ta are added to the Hf oxide film or the Zr oxide film.</p> |
