| 摘要 |
<p>A manufacturing method of a photo mask is provided to reduce a manufacturing cost and a manufacturing cycle by performing a removing process about a defect due to an error pattern on a semiconductor substrate without a complex defect removing process. A phase shift pattern and a light shielding pattern are formed on a substrate. A generation of a resident defect is detected in the substrate(210). The resident defect is predicted whether a defect is performed in the semiconductor substrate(230). A process for removing the defect is performed in case the resident defect is performed in the semiconductor substrate. An AIMS(Aerial Image Measurement System) image is measured about the substrate(250). The defect is not performed in the semiconductor substrate in case a critical dimension difference is less than 5% of a critical dimension of a normal pattern.</p> |
