TREE DIMENTIONAL MEMORY DEVICE

摘要

A three dimensional memory device is provided to simplify a manufacturing process by forming a peripheral circuit on a bulk silicon substrate. A three dimensional memory device includes a first layer(110) and a plurality of layers(120,130,140). The first layer is formed on a bulk silicon substrate. The first layer has a memory array(111) and a peripheral circuit(112). A plurality of layers is formed on a SOI(Silicon On Insulation) substrate. A plurality of layers has each memory array(121,131,141). A plurality of layers is formed on the first layer. At least one among a plurality of layers has a passive device(142). The passive device is a decoupling capacitor and a resistor. The memory array of the first layer and the memory arrays of a plurality of layers are driven by the peripheral circuit. The memory array of the first layer and the memory arrays of a plurality of layers share a bit line.