发明名称 |
PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus or a plasma treatment method having high productivity while maintaining a stable treatment performance. <P>SOLUTION: The plasma treatment apparatus for treating a sample arranged within the treatment chamber by a plasma formed by using a plurality of gases has: a plurality of feeding gas lines in which the plurality of gases respectively pass; a plurality of gas flow rate regulators respectively arranged on the feeding gas lines and respectively regulating flow rates of the plurality of gases; and a testing gas flow path coupled to the gas line so as to be arranged outside the treatment chamber and provided with a tester testing the flow rate of the gas from the gas flow rate controller arranged therein. The plasma treatment apparatus tests the gas flow rate regulator on the gas line corresponding to the gas which is not used for the treatment in the plurality of gases in parallel with the treatment. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009147182(A) |
申请公布日期 |
2009.07.02 |
申请号 |
JP20070324160 |
申请日期 |
2007.12.17 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
SATO KOHEI;KONDO HIDEAKI;TAUCHI TSUTOMU;MAKINO AKITAKA |
分类号 |
H01L21/3065;C23C16/505;C23C16/52;H01L21/205;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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