| 摘要 |
PROBLEM TO BE SOLVED: To provide an abrasive and a method of polishing a substrate using the same, which allow efficient and high-level removal of unnecessary formed film layers and flattening of silicon oxide films and embedded films of metal and the like and allow easy process control, in recess CMP technology of shallow-trench isolation formation, metal embedded wire formation, etc. and flattening CMP technology of inter-layer insulating films. SOLUTION: The abrasive contains abrasive grains of cerium oxide and an anionic surfactant, whose density is in a range of 0.5 to 10 pts.wt. with respect to 100 pts.wt. of a slurry, and has an inflection point of grinding pressure dependence in the grinding speed for a blanket wafer having a silicon oxide film formed thereon. A semiconductor chip having at least the silicon oxide film formed thereon is polished with this abrasive. COPYRIGHT: (C)2009,JPO&INPIT |
