| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal organic chemical vapor deposition device which can fundamentally suppress occurrence of thermal convection flow caused by a difference of higher and lower temperatures in a chamber. SOLUTION: The device includes: a reaction chamber 110; heating sections 131, 132 provided with upper and lower susceptors 121, 122 in upper and lower covers 111, 112, and arranged between the upper cover 111 and the upper susceptor 121, and between the lower cover 112 and the lower susceptor 122, respectively; a rotation drive section 140 which supplies energy for rotating the upper and lower susceptors 121, 122 in one direction around upper and lower hollow shafts as a rotation center; a gas supply section 150 which supplies reaction gas to a space between corresponding surfaces of the upper and lower susceptors 121, 122 opposed to each other by means of a central gas supply nozzle 153 coupled to the upper and lower hollow shafts and connecting those hollow shafts; and a gas evacuation section 160 which is disposed in contact with outer frames of the upper and lower covers 111, 112 and connected to the inner space of the reaction chamber 110 and evacuates reaction gas after completion of the reaction with a wafer. COPYRIGHT: (C)2009,JPO&INPIT |
