发明名称 METALLIZED SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a metallized substrate having a small warpage and a high bonding strength of a high melting point metal layer in the metallized substrate having the high melting point metal layer on an aluminum nitride sintered compact substrate, and a method of manufacturing the metallized substrate. SOLUTION: In the metallized substrate having the high melting point metal layer on an aluminum nitride sintered compact substrate, an alumina sintered compact layer exists between the aluminum nitride sintered compact and the high melting point metal layer, and the high melting metal layer contains alumina. The method of manufacturing the metallized substrate comprises laminating an alumina paste layer and a high melting point metal paste layer containing alumina on the aluminum nitride sinterd compact substrate, and calcinating. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009143766(A) 申请公布日期 2009.07.02
申请号 JP20070322780 申请日期 2007.12.14
申请人 TOKUYAMA CORP 发明人 TAKAHASHI NAOTO
分类号 C04B41/88;C04B41/90;H01L23/15;H05K1/09;H05K3/12 主分类号 C04B41/88
代理机构 代理人
主权项
地址