| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method to manufacture a high quality semiconductor device or substrate by controlling generation of substrate rear surface scars, and substrate slip dislocation defects generated during heat treatment. SOLUTION: The heat treatment method includes a step to load a plurality of substrates into a treatment chamber, a step to support the substrate in almost a horizontal state, with space, and vertically in plural stages, by a ring shape supporting part, composed of silicon carbide, and formed so as to contact only a rear surface part of the substrate corresponding to an area from an edge to a device fabricating area of the substrate, a step to heat-treat the substrate at 1,200°C or more temperature in a hydrogenous atmosphere while the substrate is supported by the supporting part inside the treatment chamber, and a step to unload the substrate from the treatment chamber after the substrate is heat-treated. COPYRIGHT: (C)2009,JPO&INPIT
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