| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that manufactures a film having a good uniformity between batches in the concentration and the growth rate of a doped element. SOLUTION: The method of manufacturing the semiconductor device includes a step of housing a substrate in a reaction furnace, a step of processing the substrate by supplying processing gas from a gas supply line into the reaction furnace and exhausting from an exhaust line, a step of carrying out the substrate after processing from the reaction furnace, after carrying out the substrate after processing from the reaction furnace, prior to carrying of a substrate to be next treated into the reaction furnace, while not housing at least a product substrate in the reaction furnace, while exhausting the reaction furnace through the exhaust line, and a step of purging within the reaction furnace, by repeating the opening/closing of an exhaust valve arranged in the exhaust line at a plurality of numbers. COPYRIGHT: (C)2009,JPO&INPIT
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