| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method that does not generate conical-pattern defects in a separation groove, when the separation groove is formed on a silicon substrate. SOLUTION: In dry etching using a resist pattern 13 for patterning a silicon nitride film 12 and a silicon oxide film 11, introduction defects in growth in the silicon substrate 10, which cause conical-pattern defects, are removed by digging a surface part of a separation groove forming region of the silicon substrate 10 at overetching. Thereafter, a separation groove 14 is formed, by performing dry etching with respect to the silicon substrate 10 by using a patterned silicon nitride film 12A as a mask. COPYRIGHT: (C)2009,JPO&INPIT
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