发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device and a semiconductor manufacturing apparatus which improve productivity and provide fine characteristics. SOLUTION: The manufacturing method for the semiconductor device includes a step of forming an amorphous semiconductor film 15 on an insulating substrate 1, a step of dehydrogenating the amorphous semiconductor film 15, a step of forming a protective layer 5 on the dehydrogenated amorphous semiconductor film 15, and a step of transforming the amorphous semiconductor film 15 into a polycrystal film via the protective layer 5. The insulating substrate 1 is kept in vacuum from the formation of the amorphous semiconductor film 15 to the formation of the protective layer 5. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009147232(A) 申请公布日期 2009.07.02
申请号 JP20070325146 申请日期 2007.12.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 IRIZUMI TOMOYUKI
分类号 H01L21/20;H01L21/336;H01L29/786 主分类号 H01L21/20
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