| 摘要 |
PROBLEM TO BE SOLVED: To remove a thermal absorption layer by a simple method without any smearing and furthermore to efficiently reduce defects of crystals, while carrying out a heating crystallization of an amorphous silicon thin film by using the thermal absorption layer. SOLUTION: The method of preparing a semiconductor crystal thin film comprises the steps of: previously providing a thermal absorption layer 3 in only a front surface of a place to which an amorphous semiconductor thin film is intended to be crystallized when the amorphous semiconductor thin film (a-silicon film 1) formed on a substrate 2 is crystallized; crystallizing the amorphous semiconductor thin film by carrying out an energy irradiation; thereafter adding modify substances (hydrogen or the like) by a dry process; and simultaneously performing a defect reduction of the crystallized semiconductor thin film (p-silicon film 1a), while embrittling the thermal absorption layer 3 and removing the thermal absorption layer 3 from the semiconductor thin film. COPYRIGHT: (C)2009,JPO&INPIT
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