发明名称 Ultra low voltage and minimum operating voltage tolerant register file
摘要 Methods and apparatus relating ultra-low voltage memory bit cells are described. In an embodiment, an ultra-low voltage memory device is provided using redundant paths to data storage nodes controlled by complementary write word lines. Other embodiments are also described.
申请公布号 US2009168483(A1) 申请公布日期 2009.07.02
申请号 US20070006238 申请日期 2007.12.31
申请人 HSU STEVEN K;AGARWAL AMIT;KRISHNAMURTHY RAM K 发明人 HSU STEVEN K.;AGARWAL AMIT;KRISHNAMURTHY RAM K.
分类号 G11C5/06;G11C7/00 主分类号 G11C5/06
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