| 摘要 |
A polishing composition is provided to satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprises (a) abrasive grains, (b) a processing accelerator, (c) at least one nonionic surfactant represented by R-POE (wherein R is a C10-16 alkyl group having a branched structure, and POE is a polyoxyethylene chain) and having an HLB of from 7 to 12, (d) at least one anionic surfactant, (e) a protective film-forming agent different from the nonionic surfactant or the anionic surfactant, (f) an oxidizing agent, and (g) water. |
