| 摘要 |
<p>A method for forming a pattern of a semiconductor device is provided to prevent unbalance of a gap between photoresist patterns according to a temperature by preventing a flow of the photoresist pattern through a silylation process after forming the photoresist pattern. A photoresist pattern(110a) is formed on a semiconductor substrate on which an etch target film is formed. A silylation process is performed in order to include a silicon component in the photoresist pattern. A sub film(114) is formed on the semiconductor substrate including a surface of the photoresist pattern in which the silicon component is included in order to reduce a region exposed between the photoresist patterns. The etch target film is etched by using the sub film and the photoresist pattern as an etching mask. The silicon is contained in the photoresist pattern by spraying a HMDS(Hexa Methyl Dislazane) gas on the surface of the photoresist pattern.</p> |
