| 摘要 |
<p>A method for manufacturing a transistor is provided to manufacture a transistor without an additional mask manufacturing process by forming a drift region having a graded junction profile without a drive-in process of high temperature. An active region(10) and a shallow trench isolation(20) for isolating the active region are formed on a semiconductor substrate. A photoresist pattern(30) is formed on the active region by using photolithography. A plurality of drift regions(40,50) is formed by injecting a dopant to the active region after using the photoresist pattern as a mask. The dopant is injected to the active region many times while successively increasing an injection angle in forming a plurality of drift regions. The dopant is injected to the active region many times while successively decreasing concentration of the dopant in forming a plurality of drift regions.</p> |
