| 摘要 |
A semiconductor device capacitor and a manufacturing method thereof are provided to increase a MIM(Metal-Insulator-Metal) capacitor value about the same dimension by removing a guard ring of the MIM capacitor. A bottom electrode(120) is formed on a semiconductor substrate(100). A dielectric film(140) is formed on a whole surface of the semiconductor substrate including the bottom electrode. A top electrode(160) is formed on the dielectric film. An interlayer insulation film(180) is formed on a whole surface of a top semiconductor substrate including the top electrode. A via(200) is formed by selectively etching the interlayer insulation film. The via exposes the bottom electrode.
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