| 摘要 |
A method for measuring GOI(Gate Oxide Integrity) and a GOI measuring structure for the same are provided to resolve a problem that a defect part is blocked by a polycrystalline silicon by preventing a phenomenon that a part of the polycrystalline silicon is melted into a wafer direction by thermal energy. A reverse bias is applied to a polycrystalline silicon electrode about a silicon wafer(100). A defect is detected by measuring a breakdown voltage when dielectric breakdown of a gate oxide film(101) is generated. The silicon wafer is a P-type wafer. A positive measuring voltage is applied to the polycrystalline silicon electrode(102) about the silicon wafer. The measuring voltage is increased by 200V. A temperature range for measuring the dielectric breakdown is set as 80~200°C.
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