| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multilayer substrate including a GaN layer for which a single crystal capable of being formed to have a large diameter is used as a substrate, its manufacturing method and a device using the substrate. <P>SOLUTION: The method for manufacturing the multilayer substrate including a GaN layer includes a germanium growing process for growing heteroepitaxially a germanium layer 7 on a (111) silicon substrate 3 by chemical vapor deposition, a heat-treating process for heat-treating the obtained germanium layer 7 on the silicon substrate 3 within a temperature range of 700-900°C, and a GaN growing process for subsequently growing heteroepitaxially a GaN layer 9 on the germanium layer 7. The multilayer substrate containing a GaN layer is obtained by this manufacturing method and the device is manufactured by using the substrate 1. <P>COPYRIGHT: (C)2009,JPO&INPIT |
