| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor optical element for improving light emitting characteristic formed of a group III-V compound of reduced nitrogen system. <P>SOLUTION: When two kinds of semiconductor lasers are formed through growth of GaInNAs well layer by using TEGa as the Ga raw material or growth of GaAs barrier layer using TEGa or TMGa as the Ga the raw material, a light emitting wavelength of the semiconductor laser including the GaAs barrier layer, by using TMGa as the Ga raw material is shifted to a longer wavelength. Although the growth condition of the GaInNaAs well layer that is emitting the light is completely identical to both the semiconductor lasers, the light-emitting characteristics from the GaInNaAs well layer can be improved, by changing a method of manufacturing the GaAs barrier layers holding the well layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
