发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a circuit rapidly converting a signal level even when an amplitude difference of level conversion is large. SOLUTION: This semiconductor device includes a differential-type level converting circuit that receives a first signal and outputs a second signal having larger amplitude than that of the first signal. The differential level converting circuit includes a first MISFET pair (MN1-2) for receiving the first signal; a second MISFET pair (MN3-4) for dielectric strength relaxation for the first MISFET pair; and a third MISFET pair (MP1-2), which latches the second signal to be output and includes cross-coupled gates. The film thickness of the gate insulating films of the second and third MISFET pairs is made larger than that of the first MISFET pair; and the threshold voltages of the second and first MISFET pairs are made smaller than that of the third MISFET pair. Even when the amplitude difference of the level conversion is more than 4 times, high-speed level conversion is performed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009147985(A) 申请公布日期 2009.07.02
申请号 JP20090078834 申请日期 2009.03.27
申请人 RENESAS TECHNOLOGY CORP 发明人 SUGANO YUSUKE;MIZUNO HIROYUKI;YANAGISAWA KAZUMASA
分类号 H03K19/0185 主分类号 H03K19/0185
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