METAL OXIDE SEMICONDUCTOR, PROCESS FOR PRODUCING THE METAL OXIDE SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, AND THIN-FILM TRANSISTOR

摘要

Disclosed is a process for producing a metal oxide semiconductor layer by coating, which is preferred from the viewpoint of a production environment, using a metal salt as a precursor, and by semiconductor conversion treatment which can realize the production of a metal oxide semiconductor layer at a low temperature with high production efficiency. Also disclosed is a TFT element using the semiconductor layer. The production process of a metal oxide semiconductor comprises subjecting a semiconductor precursor layer containing a metal salt to semiconductor conversion treatment to form a metal oxide semiconductor. The production process is characterized in that the metal salt includes one or more metal salts selected from metal nitrates, sulfates, phosphates, carbonates, acetates and oxalates, and the semiconductor precursor layer is formed by coating a solution of the metal salt.