| 摘要 |
A method for forming a hard mask pattern of a semiconductor device is provided to resolve a problem about an arrangement error by automatically forming a second pattern for forming a hard mask pattern if a first pattern for forming the hard mask pattern is formed. A hard mask film is formed on a semiconductor substrate(102) including an active region and an isolation region. A first etching mask pattern(106a) is formed on a top part of a region in which a target pattern is formed corresponding to an even number column of an even number row and a top part of a region in which a target pattern is formed corresponding to an odd number column of an odd number row among target patterns of a matrix shape formed on the hard mask film. A sub film(114a) is formed on a side wall of a first etching mask pattern, and has thickness capable of maintaining a step height of the first etching mask pattern. A second etching mask pattern(108a) is formed in a space between the sub films. The sub film between the first etching mask patterns and the second etching mask patterns is removed. A hard mask pattern which exposes the isolation region is formed by patterning the hard mask film after using the first etching mask patterns and the second etching mask patterns as an etching mask.
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