| 摘要 |
A low voltage drop diode and a manufacturing method thereof are provided to perform a property of high reliability and low voltage drop by maintaining a property of a PN junction in a breakdown voltage. A first conductive type epitaxial layer(120) is formed on a first conductive type semiconductor substrate(110). A second conductive type epitaxial layer(130) is formed on the first conductive type epitaxial layer. A first conductive type isolation region(140) passes through the second conductive type epitaxial layer, and is formed till the first conductive type epitaxial layer with a ring shape. A second conductive type diffusion layer(150) is formed on the second conductive type epitaxial layer inside the first conductive type isolation region. An insulation film(160) is formed in an outer circumference of the first conductive type isolation region. An electrode(170) is formed on the second conductive type diffusion layer which is an inner side of the insulation film.
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