| 摘要 |
A method for manufacturing a semiconductor device is provided to obtain a sufficient electric characteristic by suppressing the task damage of a dielectric layer due to a carbon containing layer. A dielectric layer is formed on a substrate(S104). A metal containing layer is formed on the dielectric layer(S108). At least one carbon containing layer of a silicon carbon containing layer including the silicon and the carbon and a nitrogen carbon containing layer including the nitrogen and the carbon are formed in the metal containing layer(S110). The carbon containing layer is selectively etched(S118). The metal containing layer is selectively etched and the opening unit of the carbon containing layer formed by etching is transferred(S126). When the surface of the carbon containing layer is exposed except the opening, the dielectric layer is etched by using the carbon containing layer and the metal containing layer as a mask(S128).
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