| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deposition apparatus and a deposition method which can form a film whose electric characteristics in the plane have satisfactory uniformity. <P>SOLUTION: The deposition apparatus 100 includes: an anode 102 for placing a substrate 11; a cathode 103 for generating plasma with the anode 102; a stage 104; and a heat flow control heat transfer part 110 installed between the anode 102 and the stage 104. The substrate 100 is cooled by the transfer of heat via the anode 102 and the annually formed heat flow control heat transfer part 110. In this way, a heat flow can be generated from a central area to a peripheral area of the substrate 11, and a temperature gradient can be formed inside the substrate 11. <P>COPYRIGHT: (C)2009,JPO&INPIT |
