SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the area occupied by source and drain regions is small, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device has an element isolation region 201 and an active region 202. A portion of the source region and a portion of the drain region are located above a first face where the active region is brought into contact with a gate oxide film, and a second face where the source region and/or the drain regions are brought into contact with an electrode electrically coupled to the source region and/or the drain region is inclined with respect to the first face. COPYRIGHT: (C)2009,JPO&INPIT