发明名称 |
METHOD OF PERFORMING ION IMPLANTATION |
摘要 |
A method of performing an ion implantation is provided. A workpiece is installed in the ion implanter. A wafer is provided in a receiving space within an ion implanter. An ion beam is generated by an ion source of the ion implanter. The bombard of the ion beam is blocked and particles generated during or after conducting the step of generating the ion beam are collected by the workpiece.
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申请公布号 |
US2009166567(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20090403191 |
申请日期 |
2009.03.12 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN JUI-FANG;CHANG CHENG-HUNG;CHEN CHUNG-JUNG;YANG CHIH-MING;KO CHIEN-KUO |
分类号 |
H01J37/08 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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