| 摘要 |
An active field emission substrate including a thin film transistor (TFT) substrate and a field emission device substrate is provided. The TFT substrate has a plurality of TFTs, and each TFT at least includes a source, a drain, and a gate. The field emission device substrate is disposed on the TFT substrate and has a plurality of conductive channels and a plurality of field emission sources. Each conductive channel passes through the field emission device substrate and is electrically connected with each field emission source. Moreover, each conductive channel in the field emission device substrate is electrically conducted with the source or the drain of each TFT in the TFT substrate. The active field emission substrate is made up of two substrates fabricated by separate processes, so the procedures can be simplified and the yield can be improved.
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