发明名称 |
METHOD OF FORMING A BOTTLE-SHAPED TRENCH BY ION IMPLANTATION |
摘要 |
Disclosed is a method of forming a bottle shaped trench in a substrate which includes forming at least one trench having an upper portion and a lower portion into a semiconductor substrate, the at least one trench having vertical sidewalls that extend to a common bottom wall; implanting ions into the semiconductor substrate abutting the upper portion of the at least one trench to form an amorphous region in the semiconductor substrate abutting the upper portion of the at least one trench; and etching the lower portion of the at least one trench selective to the amorphous region to provide an elongated bottom portion which extends laterally beyond the upper portion.
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申请公布号 |
US2009170331(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20080187917 |
申请日期 |
2008.08.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;FALTERMEIER JOHNATHAN E.;RADENS CARL |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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