| 摘要 |
An image sensor and manufacturing method thereof are provided. The image sensor can include a gate, a channel region, a first p-type doped region, a second p-type doped region, an n-type doped region, and a floating diffusion region. The gate can be disposed on a semiconductor substrate, and the channel region can be disposed in the semiconductor substrate under the gate. The first p-type doped region can be disposed at a side of the gate and can be adjacent to the channel region. The second p-type doped region can be disposed under the first p-type doped region and spaced apart from the gate. The n-type doped region can be disposed under the first and second p-type doped regions, and the floating diffusion region can be disposed at another side of the gate.
|
