发明名称 |
POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER |
摘要 |
A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage.
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申请公布号 |
US2009166729(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20070965387 |
申请日期 |
2007.12.27 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
ZUNDEL MARKUS;HIRLER FRANZ;WILLMEROTH ARMIN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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