| 摘要 |
The invention relates to a surface-emitting semiconductor laser which comprises a semiconductor layer sequence (20) having a pump laser (7), and which comprises a second semiconductor layer sequence (3), arranged on the first semiconductor layer sequence (20), having a vertical emitter (1). Said vertical emitter (1) comprises a radiation-emitting active layer (4), a radiation emitting side (5) and a fastening side (6) opposite the radiation emitting side (5), the pump laser (7) being arranged on the radiation emitting side (5) of the vertical emitter (1) and a supporting body (2) being arranged on the fastening side (6) of the vertical emitter (1). The invention further relates to a method for producing a surface-emitting semiconductor laser. |
