GALLIUM ARSENIDE SEMICONDUCTOR MATERIAL INCORPORATING BISMUTH AND PROCESS FOR EPITAXIAL GROWTH

摘要

A process for epitaxial growth of a semiconductor material is disclosed. The process involves heating a substrate, and exposing the substrate to respective fluxes of gallium, arsenic and bismuth. Heating includes heating the substrate to a sufficiently low substrate temperature and exposing includes controlling respective flux rates of the respective fluxes to facilitate epitaxial growth of an electroluminescent active region including gallium arsenide and incorporated bismuth. A semiconductor material and semiconductor light emitting device including gallium arsenide and incorporated bismuth are also disclosed.