METHOD OF FORMING PATTERNS IN SEMICONDUCTOR DEVICE

摘要

A method for forming a pattern of a semiconductor device is provided to form a micro pattern having a pitch of width narrower than a limit pitch of an exposure process by using a photoresist film which is exposed at specific energy of a light source. An etch target film(202) is formed on a semiconductor substrate(200) on which a first region and a second region are divided. A hard mask film is formed on a top part of the etch target film. A first photoresist film(204) is formed on a top part of the hard mask film. An exposure process is performed by using a first slit(206) in which a part of the first region is opened. A first exposure region(204a) of width narrower than a pattern of the first slit is formed. A first photoresist pattern is formed by removing the first exposure region. The hard mask film on the first region is patterned according to the first photoresist pattern.