| 摘要 |
A CMOS inverter and manufacturing method thereof are provided to simplify a process and to reduce a whole dimension by forming a gate electrode inside a trench and by commonly using a gate electrode of an NMOS transistor and a PMOS transistor. A semiconductor substrate(101) is defined into a PMOS region(102) and an NMOS region(103). A trench is formed inside a surface of the semiconductor substrate between the PMOS region and the NMOS region as a fixed depth. A gate electrode(106) is formed by interposing a gate insulation film inside the trench. An interlayer insulation film(107) is formed on a whole surface of the semiconductor substrate including the gate electrode. A metal line(109) passes through the interlayer insulation film, and is connected to the semiconductor substrate. The gate electrode is a gate commonly used in the PMOS region and the NMOS region. An input signal(Vin) is connected to the gate electrode.
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