| 摘要 |
A method for forming a metal line of a semiconductor device is provided to prevent etching damage to a substrate by performing a metal line trench etching process after filling a contact hole with a buffer film. An interlayer insulation film(101) is formed on a semiconductor substrate(100). A contact hole(104) is formed by etching the interlayer insulation film, and exposes a junction region of the semiconductor substrate. The contact hole is filled with a buffer film(105). A trench(108) for a metal line is formed by etching a top part of the buffer film and the interlayer insulation film. The buffer film is removed. The contact hole and the trench for the metal line are filled with metal material.
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