| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a III-V compound semiconductor polycrystalline thin film of excellent electric conductivity and a band gap larger than InAs. <P>SOLUTION: By forming an In<SB>1-x</SB>Ga<SB>x</SB>As polycrystalline thin film whose Ga composition x satisfies 0<x<0.5 on a glass substrate or a plastic substrate by a molecular beam deposition method, an n type III-V compound semiconductor polycrystalline thin film having the band gap larger than InAs and the sufficient electric conductivity is obtained. The III-V compound semiconductor polycrystalline thin film formed in such a manner is used for an n type layer of the semiconductor device. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
