GERMANIUM PRECURSORS FOR GST FILM DEPOSITION

摘要

A method for depositing a germanium containing film on a substrate is disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A germanium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 1000°C. Germanium is deposited onto the substrate through a deposition process to form a thin film on the substrate.