| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A method of manufacturing the semiconductor device is provided to improve the process margin for the use of the reflection barrier layer and improve the profile of the photoresist patterns. The method of manufacturing a semiconductor device comprises a formation step of the first mask pattern(220), and a formation step of the second mask pattern(230a) and a formation step of spacer(270). The formation step of the first mask pattern is performed in order to form the first mask pattern on the etched layer. The formation step of the second mask pattern is performed in order to form the second mask pattern on the etched layer. The formation step of the spacer is performed in order to form spacers on the side walls of the second mask pattern and the first mask pattern.</p> |
| 申请公布号 |
KR20090072920(A) |
申请公布日期 |
2009.07.02 |
| 申请号 |
KR20080049895 |
申请日期 |
2008.05.28 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, KI LYOUNG;BOK, CHEOL KYU |
| 分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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