| 摘要 |
<p>A method for correcting a critical dimension of a photo mask using an ultraviolet system is provided to correct a critical dimension by uniformly irradiating an ultraviolet on a whole surface of a substrate. A target film is formed on a substrate. A photoresist pattern is formed on the target film, and defines a region for forming a pattern. A first mask pattern is formed by etching the target film after using the photoresist pattern as a mask. A critical dimension of the photoresist pattern is measured. A region for correcting a critical dimension is set by comparing the measured critical dimension with a target critical dimension. The substrate on which the first mask pattern is formed is loaded inside an ultraviolet system(300) including an ultraviolet lamp(330) and a rotatable mask loader part(315). The first mask pattern is exposed as a critical dimension to be corrected by irradiating the ultraviolet on the photoresist pattern while the mask loader part is rotated. A second mask pattern is formed by etching the first mask pattern after using the photoresist pattern as a mask.</p> |
