发明名称 SYSTEMS AND METHODS FOR FAST STATE MODIFICATION OF AT LEAST A PORTION OF NON-VOLATILE MEMORY
摘要 A method is provided for reducing the number of writes in a non-volatile memory (122). The method involves writing data in the non-volatile memory and determining a set of data from the data in the non-volatile memory to be written to a removable memory (126) that is operatively coupled to the non-volatile memory (e.g., a NAND memory). The method also involves writing the set of data to the removable memory (e.g., a hard disk) from the non-volatile memory. The method further involves writing a delineation marker (e.g., a sequence number) to the non-volatile memory specifying that the set of data has been written to the removable memory. Notably, the metadata of the data in the non-volatile memory comprises at least one marker set as a specific marker type (e.g., a valid marker and a dirty marker).
申请公布号 US2009172280(A1) 申请公布日期 2009.07.02
申请号 US20070966826 申请日期 2007.12.28
申请人 INTEL CORPORATION 发明人 TRIKA SANJEEV N.;HENSGEN DEBRA;CHAU HAN H.;JOHNSTON MICHAEL
分类号 G06F12/00 主分类号 G06F12/00
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