发明名称 |
MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME |
摘要 |
In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided. |
申请公布号 |
US2009166609(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20070968156 |
申请日期 |
2007.12.31 |
申请人 |
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发明人 |
SCHRICKER APRIL;CLARK MARK;HERNER BRAD |
分类号 |
H01L51/30 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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