| 摘要 |
<p>A nonvolatile memory device and a manufacturing method thereof are provided to improve a focus margin by minimizing a step height of a cell region and a peripheral region before etching a gate. A first isolation film(112a) and a second isolation film(112b) are formed inside a trench of an isolation region of a semiconductor substrate(100), and are protruded higher than a peripheral region in a cell region. A tunnel insulation film(102a) is formed on the semiconductor substrate between the first isolation films in the cell region. A charge storage insulation film(104) is formed by minimizing a step height with the first isolation film on the tunnel insulation film. A gate insulation film(102b) is formed by minimizing a step height with the second isolation film, and is formed on the semiconductor substrate between the second isolation films in the peripheral region. A first conductive film(116) is formed by minimizing a step height with the charge storage insulation film, and is formed on the gate insulation film. A blocking insulation film(120) intersects with the first isolation film and the second isolation film.</p> |
