| 摘要 |
A method for forming an isolation film of a semiconductor device is provided to control a height of an effective isolation film by recessing an insulation film filled in a trench through a complex process of a dry etching and a wet etching. A tunnel insulation film(210), a floating gate(220), and a pad nitride film are successively formed on a semiconductor substrate(200). A trench is formed in an isolation region of the semiconductor substrate. A liner insulation film(250) is formed on a side wall of the trench. An insulation film(260) is formed on the substrate in order to fill the trench. The insulation film and the liner insulation film are recessed till a fixed part of a side surface of the floating gate by a dry etching. The insulation film is recessed under a surface of the semiconductor substrate by a wet etching. A capping film(270) is formed on the insulation film and the side surface of the floating gate. A hemi spherical type isolation film is performed by etching the capping film.
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