SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of decreasing the voltage required for light emission.

SOLUTION: An LED comprises: a light-emitting layer for emitting light with a carrier injected; and a photonic crystal layer 8 formed on one main surface side of the light-emitting layer. The photonic crystal layer 8 has a plurality of grid points 81 including Si, and a mother layer 82. The mother layer 82 surrounds each of the plurality of grid points 81 in planar view, and includes GaN. The interval between one grid point 81a out of the plurality of grid points 81 and the grid point 81b nearest to the grid point 81a is ≥130 nm and ≤10 μm.

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