| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a word line driving circuit which simplifies device configuration and manufacturing process and reduces chip area more effectively. <P>SOLUTION: A non-volatile semiconductor storage device includes a plurality of word line driving units U having a first P-type and a first N-type MOS transistors for selectively applying a positive voltage of a first power supply terminal VD1 and a negative voltage or the ground voltage of a negative voltage supplying circuit PS to the word line W according to a voltage of a node N1, and a second P-type and a second N-type MOS transistors whose back gate terminals are connected to a second power supply terminal VD2 to control the voltage of the node N1; and a negative voltage supply circuit PSj common to a plurality of the word line driving units U comprising a negative voltage level shifter LSN1 outputting a voltage according to the negative voltage control signal, a third N-type and a fourth N-type MOS transistors whose back gate terminals are connected to the second power supply terminal VD2 to control supply of the negative voltage or the ground voltage to the word line driving units U according to the output voltage of the negative voltage level shifter LSN1. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
